Band gaps (eV) for Si, SnSe, PbTe and Bi2Te3: dense-mesh PBE(+SOC), coarse-mesh PBE and HSE06 without SOC, the HSE06 minus PBE shift, the shifted gap, and experiment. ABACUS 3.10.1 LCAO, DZP basis, kspacing 0.3 for the coarse runs, 8 cores. Single runs, 2026-10-01.